Since 1997, As a high-tech enterprise specializing in the design of IC chip and the manufacturing of semiconductor microelectronics-related products, Hangzhou Silan Microelectronics Co., Ltd. is located in Hangzhou High-tech Industrial Development Zone. The company was founded in September 1997 and was listed on the Shanghai Stock Exchange and the company is the first IC chip design enterprise listed in China. Thanks to the rapid development of China's electronic information industry, Silan has become one of the largest IC design and manufacturing enterprises in China, and many indicators such as technical level, business scale, profitability etc. are among the best in the domestic counterparts.

Their technologies and products cover many fields of consumer products, and maintain a leading position in many technical fields, such as green power supply chip technology, MEMS sensor technology, LED lighting and screen display technology, high-voltage smart power module technology, the third-generation power semiconductor device technology, digital audio and video technology etc. Moreover, with rich experience in multiple fields of chip design, we can provide customers with solutions on targeted chip product series and systemic applications.

Their product and R&D investment is mainly focused on the following three fields:

ICs, Power Module(IPM/ PIM), Discrete Devices and kinds of MCU/ IC power semiconductor solutions based on Silan’s own special process of high voltage, high power and high frequency.

MEMS sensors & Digital audio SoC and speech recognition.

Optoelectronic products, LED chip Manufacturing and packaging (for indoor and outdoor LED display panel as well as LED illumination applications).

Hot Product:

SDM03C60DB2

600V/3A 3-PHASE FULL-BRIDGE DRIVER (INTELLIGENT POWER MODULE)

SDM03C60DB2 is a 3-phase brushless DC motor driver IC with highly-integrated and high reliability, using for small power motor drive applications such as fan motor, consisting of built-in 6 fast recovery MOSFET and 3 half-bridge HVIC for gate driving.

The under voltage, short circuit protections and temperature output integrated make the circuit work safely in a wide range. The current of each phase can be detected separately because there is one independent negative DC terminal for each phase.

SDM03C60DB2 is designed with good insulation, perfect thermal properties and low EMI. It is compact and suitable for built-in motors or any other applications requiring the compact installation.

Main feature

• Built-in 600V/3A fast recovery MOSFET
• Built-in high-voltage integrated circuit of gate driver
• Built-in under voltage protections, over current protection and temperature output
• Built-in shut-down input
• Built-in inter-lock function
• Built-in bootstrap diode with current limiting resistor
• Compatible with 3.3V, 5V MCU interface, active high
• Three independent negative DC terminals for inverter current detection
• Isolation rating: 1500Vrms/min