Since 1997, As a high-tech enterprise specializing in the design of IC chip and the manufacturing of semiconductor microelectronics-related products, Hangzhou Silan Microelectronics Co., Ltd. is located in Hangzhou High-tech Industrial Development Zone. The company was founded in September 1997 and was listed on the Shanghai Stock Exchange and the company is the first IC chip design enterprise listed in China. Thanks to the rapid development of China's electronic information industry, Silan has become one of the largest IC design and manufacturing enterprises in China, and many indicators such as technical level, business scale, profitability etc. are among the best in the domestic counterparts.

Their technologies and products cover many fields of consumer products, and maintain a leading position in many technical fields, such as green power supply chip technology, MEMS sensor technology, LED lighting and screen display technology, high-voltage smart power module technology, the third-generation power semiconductor device technology, digital audio and video technology etc. Moreover, with rich experience in multiple fields of chip design, we can provide customers with solutions on targeted chip product series and systemic applications.

Their product and R&D investment is mainly focused on the following three fields:

ICs, Power Module(IPM/ PIM), Discrete Devices and kinds of MCU/ IC power semiconductor solutions based on Silan’s own special process of high voltage, high power and high frequency.

MEMS sensors & Digital audio SoC and speech recognition.

Optoelectronic products, LED chip Manufacturing and packaging (for indoor and outdoor LED display panel as well as LED illumination applications).

Hot Product: SFR20F60F2

SFR20F60F2 is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time.

Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics.

This device is widely used in the SMPS, UPS, PFC, and other fields.

Main feature

• Ultrafast 35 Nanosecond Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current