Since 1997, As a high-tech enterprise specializing in the design of IC chip and the manufacturing of semiconductor microelectronics-related products, Hangzhou Silan Microelectronics Co., Ltd. is located in Hangzhou High-tech Industrial Development Zone. The company was founded in September 1997 and was listed on the Shanghai Stock Exchange and the company is the first IC chip design enterprise listed in China. Thanks to the rapid development of China's electronic information industry, Silan has become one of the largest IC design and manufacturing enterprises in China, and many indicators such as technical level, business scale, profitability etc. are among the best in the domestic counterparts.

Their technologies and products cover many fields of consumer products, and maintain a leading position in many technical fields, such as green power supply chip technology, MEMS sensor technology, LED lighting and screen display technology, high-voltage smart power module technology, the third-generation power semiconductor device technology, digital audio and video technology etc. Moreover, with rich experience in multiple fields of chip design, we can provide customers with solutions on targeted chip product series and systemic applications.

Their product and R&D investment is mainly focused on the following three fields:

ICs, Power Module(IPM/ PIM), Discrete Devices and kinds of MCU/ IC power semiconductor solutions based on Silan’s own special process of high voltage, high power and high frequency.

MEMS sensors & Digital audio SoC and speech recognition.

Optoelectronic products, LED chip Manufacturing and packaging (for indoor and outdoor LED display panel as well as LED illumination applications).

Hot Product : SDM15G60TA

SDM15G60TA is a 3-phase brushless DC motor driver with high integration and high reliability for low power inverter driving such as air conditioner, washing machine and low power inverter. It has embedded six low-loss IGBTs and 3-phase full-bridge gate drivers with high voltage.

The under voltage, short circuit and over temperature protections integrated make the circuit work safely in a wide range. The current of each phase can be detected separately because there is one independent negative DC terminal for each phase.

SDM15G60TA uses high-insulation design, compact package and carries heat easily, which makes it easy to use especially for compact installation applications.

Main feature

• Built-in low-loss 600V/15A IGBT;
• Built-in high-voltage integrated circuit of gate driver;
• Built-in under voltage protection, over temperature protection, over current protection and temperature output;
• Built-in bootstrap diode with current limiting resistor;
• Compatible with 3.3V, 5V MCU interface, active high;
• Three independent negative DC terminal for inverter current detection;
• Alarm signal: for low-side under voltage, over temperature and short circuit protections;
• Very low thermal resistance using Al2O3 DBC substrate;
• Insulation level: 1500Vrms/min